Home - Products - Silicon Carbide - Details
High Frequency Power Devices Silicon Carbide
video
High Frequency Power Devices Silicon Carbide

High Frequency Power Devices Silicon Carbide

Silicon Carbide (SiC) is particularly well-suited for high-frequency power devices due to its unique electrical properties.

Description

ZhenAn International Co., Limited is one of the most reliable manufacturers and suppliers of high frequency power devices silicon carbide in China. With abundant experience, we warmly welcome you to wholesale discount high frequency power devices silicon carbide in stock here from our factory. Quality products and reasonable price are available.

 

 Description

SiC-based devices can operate at high frequencies with minimal performance degradation, making them ideal for applications that require efficient power conversion at high switching speeds.High Frequency Power Devices Silicon Carbide.
SiC's wide bandgap allows for low losses at high frequencies, enabling efficient power conversion and reducing energy losses. SiC-based power devices can achieve higher operating frequencies, leading to miniaturized and lightweight electronic systems.

Specification
Property Value
Chemical formula SiC
Crystal structure Hexagonal
Density 3.21 g/cm³
Melting point 2,730°C (4,946°F)
Hardness (Mohs scale) 9.5
Thermal conductivity 120-200 W/m·K
Electrical resistivity 10⁵-10⁷ Ω·m
Coefficient of thermal expansion (CTE) 4.0-6.0 x 10⁻⁶/°C
Maximum operating temperature 1,600-2,800°C (2,912-5,072°F)
Young's modulus 370-700 GPa
Poisson's ratio 0.16-0.22
Dielectric constant 9.7-10.7
Bandgap energy 2.2-3.3 eV
Chemical resistance Highly resistant to acids, alkalis, and oxidation
Thermal shock resistance Excellent
Abrasion resistance Excellent
Wear resistance Excellent
High-temperature stability Excellent

 

 

 

High Frequency Power Devices Silicon Carbide

High Frequency Power Devices Silicon Carbide

High Frequency Power Devices Silicon Carbide.Furthermore, SiC's superior thermal conductivity facilitates effective heat dissipation in high-frequency power devices. This characteristic allows for higher power densities without excessive temperature rise, ensuring reliable and efficient operation at elevated frequencies.

SiC-based high-frequency power devices find applications in various industries, including telecommunications, aerospace, and industrial automation. These devices are used in power amplifiers, RF transmitters, radar systems, and high-frequency switching applications.

FAQ

Q:Are you a factory or a trading company?
A:We have factories and trading companies, factories and warehouses in Anyang, Henan Province, to provide you with the best prices and the best quality sources, and a professional international marketing team to provide you with a wide range of personalized services.

Q:What is the MOQ for trial order? Can samples be provided?
A:There is no limit to the MOQ, we can provide the best solution according to your situation. Can also provide you with samples.

Q:How long will the delivery take?
A:Once the contract is signed, our normal delivery time is about 2 weeks, but it also depends on the quantity of the order.

Contact Us

1

 

Hot Tags: high frequency power devices silicon carbide, China high frequency power devices silicon carbide manufacturers, suppliers, factory, Silicon Carbide Briquette, Silicon Carbide Powder, High Density 98% SiC Powder Green Silicon Carbide, silicon carbide semiconductor, High Hardness Green Black Sic Silicon Carbide Grains Powder, Black Silicon Carbide 98% SiC Silicon Carbide Powder

You Might Also Like

Shopping Bags