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Enhanced Semiconductor Reliability Silicon Carbide
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Enhanced Semiconductor Reliability Silicon Carbide

Enhanced Semiconductor Reliability Silicon Carbide

Silicon Carbide (SiC) offers enhanced reliability for semiconductor devices, making it a preferred material in demanding applications.

Description

 Description

SiC's unique properties contribute to the improved reliability and robustness of semiconductor components.Enhanced Semiconductor Reliability Silicon Carbide.
SiC's high-temperature stability enables devices to operate in harsh environments with minimal performance degradation. SiC-based semiconductor devices can withstand elevated temperatures without compromising their electrical performance and longevity.

Specification
Property Value
Chemical formula SiC
Crystal structure Hexagonal
Density 3.21 g/cm³
Melting point 2,730°C (4,946°F)
Hardness (Mohs scale) 9.5
Thermal conductivity 120-200 W/m·K
Electrical resistivity 10⁵-10⁷ Ω·m
Coefficient of thermal expansion (CTE) 4.0-6.0 x 10⁻⁶/°C
Maximum operating temperature 1,600-2,800°C (2,912-5,072°F)
Young's modulus 370-700 GPa
Poisson's ratio 0.16-0.22
Dielectric constant 9.7-10.7
Bandgap energy 2.2-3.3 eV
Chemical resistance Highly resistant to acids, alkalis, and oxidation
Thermal shock resistance Excellent
Abrasion resistance Excellent
Wear resistance Excellent
High-temperature stability Excellent

 

Enhanced Semiconductor Reliability Silicon Carbide

Enhanced Semiconductor Reliability Silicon Carbide

This characteristic is particularly valuable in applications such as automotive, aerospace, and power electronics, where devices may be exposed to high-temperature conditions.

Enhanced Semiconductor Reliability Silicon Carbide.Moreover, SiC exhibits excellent chemical resistance, protecting semiconductor components from corrosive substances and environmental factors. SiC-based devices are less prone to degradation caused by chemical reactions or exposure to moisture, ensuring long-term reliability and durability.

SiC's high breakdown electric field strength and low leakage currents contribute to the enhanced reliability of semiconductor devices. SiC-based devices can handle higher voltages and exhibit lower leakage currents, reducing the risk of breakdown and improving the overall robustness of the components.

The enhanced reliability of SiC-based semiconductor devices translates to longer lifespan, reduced maintenance requirements, and improved system performance in critical applications such as power electronics, automotive electronics.

FAQ

Q: Are you a trading company or a manufacturer?
A: we are a manufacturer located in Anyang City, Henan Province,China. All our customers come from home and abroad. Looking forward to your visit.

Q: How long is your delivery time?
A: Generally 5-10 days if the goods are in stock, 15-20 days if the goods are not in stock. It is according to the order quantity.

Q: Do you provide free samples?
A: Yes, we could offer the free sample, you only need to pay the freight.

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