Superior Electrical Performance Silicon Carbide
Silicon Carbide (SiC) exhibits superior electrical performance compared to traditional silicon-based materials, making it highly desirable for various electronic applications.
Description
ZhenAn International Co., Limited is one of the most reliable manufacturers and suppliers of superior electrical performance silicon carbide in China. With abundant experience, we warmly welcome you to wholesale discount superior electrical performance silicon carbide in stock here from our factory. Quality products and reasonable price are available.
Description
SiC's unique properties enable high-performance electronic devices with enhanced efficiency and reliability.
Superior Electrical Performance Silicon Carbide.SiC's wide bandgap allows for higher breakdown voltages, enabling the development of high-voltage power devices. SiC-based devices can operate at higher voltages while maintaining their structural integrity and electrical performance. This characteristic is particularly advantageous in power electronics applications, where higher voltage capabilities are required.
Specification
| Property | Value |
|---|---|
| Chemical formula | SiC |
| Crystal structure | Hexagonal |
| Density | 3.21 g/cm³ |
| Melting point | 2,730°C (4,946°F) |
| Hardness (Mohs scale) | 9.5 |
| Thermal conductivity | 120-200 W/m·K |
| Electrical resistivity | 10⁵-10⁷ Ω·m |
| Coefficient of thermal expansion (CTE) | 4.0-6.0 x 10⁻⁶/°C |
| Maximum operating temperature | 1,600-2,800°C (2,912-5,072°F) |
| Young's modulus | 370-700 GPa |
| Poisson's ratio | 0.16-0.22 |
| Dielectric constant | 9.7-10.7 |
| Bandgap energy | 2.2-3.3 eV |
| Chemical resistance | Highly resistant to acids, alkalis, and oxidation |
| Thermal shock resistance | Excellent |
| Abrasion resistance | Excellent |
| Wear resistance | Excellent |
| High-temperature stability | Excellent |
Superior Electrical Performance Silicon Carbide.Moreover, SiC exhibits a higher saturation velocity than silicon, allowing for faster electron transport and improved device performance at high frequencies. SiC-based devices can operate at higher switching speeds, enabling efficient power conversion and reducing switching losses. This property makes SiC suitable for high-frequency applications such as wireless communication systems and radar systems.
SiC also demonstrates lower intrinsic carrier concentrations and reduced leakage currents compared to silicon. This property results in lower conduction losses and improved power efficiency in electronic devices. SiC-based power electronics can achieve higher energy efficiency, reducing power consumption and heat generation.
FAQ
Q: Are you trading company or manufacturer ?
A: We are manufacturer located in Henan,China. All our clients from home or abroad. Looking forward to your visitvis .
Q: What is your advantages?
A: We have our own factories. We have rich experience in metallurgical steelmaking field.
Q: Is the price negotiable?
A: Yes, please feel free to contact us anytime if you have any question . And for clients who wants to enlarge market, we will do our best to support.
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