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SiC Market Summary On September 8, 2023

SiC Market Summary On September 8, 2023

Thanks to their outstanding physical and electronic properties, SiC-based power devices are driving a revolution in power electronics.

Although this material has long been known, its use as a semiconductor is relatively new, due in large part to the availability of large and high-quality wafers. In recent decades, efforts have focused on developing specific and unique high-temperature crystal growth processes.

Although SiC has different polymorphic crystal structures (also called polymorphs), the 4H-SiC polymorphic hexagonal crystal structure is best suited for high-power applications.

What are the main properties of silicon carbide?

The combination of silicon and carbon gives this material excellent mechanical, chemical and thermal properties, including:

High thermal conductivity

Low thermal expansion and excellent thermal shock resistance

Low power and switching losses

High energy efficiency

High operating frequency and temperature (operating temperature up to 200°C junction)

Small chip size (with same breakdown voltage)

Intrinsic body diode (MOSFET device)

Excellent thermal management for reduced cooling requirements

long life

What are the application areas of silicon carbide?

Silicon carbide is a semiconductor well suited for power applications, largely due to its ability to withstand high voltages, ten times higher than what silicon can use. Silicon carbide-based semiconductors have higher thermal conductivity, higher electron mobility and lower power losses. Silicon carbide diodes and transistors can also operate at higher frequencies and temperatures without compromising reliability.

SiC FAQ