How To Produce High-purity Silicon Carbide?

In the production of silicon carbide, the traditional method is to mix silica with coke and heat it in an impedance furnace; Or the silica powder and carbon are mixed in a ratio of more than 1 to 3 for granulation and heated in a continuous furnace; The silicon carbide produced by these two methods usually contains certain impurities, which directly affects the application effect of silicon carbide. However, such problems will not occur in the application of high-purity silicon carbide.

In order to produce high-purity silicon carbide, it is necessary to first mix silica powder and carbon powder for granulation, then mix the granulation with granular carbon material, heat it in a non oxidizing atmosphere above 1600 ℃, so that most of the silicon dioxide in the granulation reacts with carbon to generate gaseous silicon oxide. The gaseous silicon oxide further reacts with the granular carbon material to generate silicon carbide, and the impurities remain in the original granulation, after removing the impurities, High purity silicon carbide is produced. High purity silicon carbide can be used as raw material for sintering, synthetic resin filler and coating material for easy wearing parts of metal appliances. It is a very promising material in the market.