CZ Silicon Wafer
CZ silicon wafers are commonly used in the semiconductor industry as substrates for the fabrication of integrated circuits, microprocessors, and other electronic devices. They are prized for their high purity, low defect density, and excellent electrical properties.
Description
Description
A CZ silicon wafer is a type of silicon wafer that is manufactured using the Czochralski (CZ) method, which is a popular method for growing single crystals of silicon. The CZ method involves melting high-purity silicon in a crucible and then slowly pulling a seed crystal from the melt while rotating the crucible and the seed crystal in opposite directions.
As the seed crystal is pulled out of the melt, it causes the silicon to solidify in a cylindrical shape around the seed crystal. This process results in a single crystal of silicon that is free of defects and has a high degree of purity.
Specification
| Diameter | 2" | 3" | 4" | 5" | 6" | 8" | 12" |
| Grade | Prime | ||||||
| Growth Method | CZ | ||||||
| Orientation | < 1-0-0 > , < 1-1-1 > , < 1-1-0 > | ||||||
| Type/Dopant | P Type/Boron , N Type/Phos, N Type/As, N Type/Sb | ||||||
| Thickness (μm) | 279 | 380 | 525 | 625 | 675 | 725 | 775 |
| Thickness Tolerance | Standard ± 25μm, Maximum Capabilities ± 5μm | ± 20μm | ± 20μm | ||||
| Resistivity | 0.001 - 100 ohm-cm | ||||||
| Surface Finished | P/E , P/P, E/E, G/G | ||||||
| TTV (μm) | Standard < 10 um, Maximum Capabilities <5 um | ||||||
| Bow/Warp (?m) | Standard <40 um, Maximum Capabilities <20 um | <40μm | <40μm | ||||
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